1.1: Invited Paper: High Mobility Self‐Aligned Coplanar and BCE IGTO Semiconductor TFTs for Future Applications
نویسندگان
چکیده
Self-aligned coplanar structure and back channel etched (BCE) have been developed using InGaSnO (IGTO) active layer. The mobility of IGTO TFT is around 25 cm2V−1s−1 for both structures. 31 inch 4K2K (144ppi) top emission IJP AMOLED driven by self-aligned TFTs 10.7 120 × (× RGB) mini-LED display BCE are fabricated to verify TFT's characteristics. High future applications such as high resolution narrow bezel OLED displays micro-LED displays.
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ژورنال
عنوان ژورنال: Sid's Digest Of Technical Papers
سال: 2021
ISSN: ['2154-6738', '2168-0159', '2154-6746', '0097-966X']
DOI: https://doi.org/10.1002/sdtp.14592